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| AP4525GEH RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement Good Thermal Performance Fast Switching Performance S1 G1 D1/D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID 40V 28m 15A -40V 42m -12A S2 G2 P-CH BVDSS TO-252-4L RDS(ON) ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating N-channel 40 16 15.0 12.0 50 10.4 0.083 -55 to 150 -55 to 150 P-channel -40 16 -12.0 -10.0 -50 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 12 110 Unit /W /W Data and specifications subject to change without notice 1 200809235 AP4525GEH N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.03 6 9 1.5 4 7 20 20 4 580 100 70 2 Max. Units 28 32 3 1 25 30 14 930 3 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A VGS=4.5V, ID=4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=40V, VGS=0V VGS=16V ID=6A VDS=20V VGS=4.5V VDS=20V ID=6A RG=3,VGS=10V RD=3.3 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Drain-Source Leakage Current (T j=70 C) VDS=32V, VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=15A, VGS=0V IS=6A, VGS=0V dI/dt=100A/s Min. - Typ. 20 15 Max. Units 1.8 V ns nC Reverse Recovery Time Reverse Recovery Charge 2 AP4525GEH P-CH Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Static Drain-Source On-Resistance Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-40V, VGS=0V o Min. -40 -0.8 - Typ. -0.03 5 9 2 5 8.5 15 27 25 770 165 115 6 Max. 42 60 -2.5 -1 -25 30 24 1230 9 Units V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Drain-Source Leakage Current (Tj=70 C) VDS=-32V, VGS=0V VGS=16V ID=-5A VDS=-20V VGS=-4.5V VDS=-20V ID=-5A RG=3,VGS=-10V RD=4 VGS=0V VDS=-20V f=1.0MHz f=1.0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-12A, VGS=0V IS=-5A, VGS=0V dI/dt=-100A/s Min. - Typ. 20 16 Max. -1.8 - Units V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.N-CH , P-CH are same . THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4525GEH N-Channel 50 50 40 T A = 25 C o ID , Drain Current (A) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V 40 T A = 150 C o 10V 7.0V 5.0V 4.5V 30 30 20 20 V G =3.0V 10 V G =3.0V 10 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 ID=4A 100 T A =25 o C Normalized RDS(ON) 1.6 ID=6A V G =10V RDS(ON) (m ) 80 60 1.2 40 20 2 4 6 8 10 0.8 25 50 75 100 125 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 14 12 10 Normalized VGS(th) (V) T j =150 o C IS(A) 8 T j =25 o C 1.2 6 0.8 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4525GEH N-Channel f=1.0MHz 12 1000 VGS , Gate to Source Voltage (V) I D =6A V DS =20V 8 C iss C (pF) 100 C oss C rss 4 0 0 5 10 15 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 10 ID (A) 0.1 100us 0.1 0.05 PDM 0.02 1 T A =25 o C Single Pulse 0.1 0.1 1 10 1ms 10ms 100ms 1s DC 100 t T Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 VG V DS =5V 40 ID , Drain Current (A) T j =25 o C 30 T j =150 o C QG 4.5V QGS QGD 20 10 Charge 0 0 2 4 6 8 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5 AP4525GEH P-Channel 50 50 T A = 25 C 40 o -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V -ID , Drain Current (A) 40 T A = 150 C o -10V -7.0V -5.0V -4.5V 30 30 20 V G = - 3.0V 20 V G = - 3.0V 10 10 0 0 1 2 3 4 5 6 0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 200 1.6 I D = -3 A 170 T A =25 o C 1.4 I D = -5A V G = -10V RDS(ON) (m) Normalized RDS(ON) 140 110 1.2 80 1.0 50 20 2 4 6 8 10 0.8 25 50 75 100 125 150 -V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 12 10 Normalized -VGS(th) (V) 1.3 1.5 1.2 8 -IS(A) 6 T j =150 o C 4 T j =25 o C 0.8 2 0 0.1 0.3 0.5 0.7 0.9 1.1 0.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4525GEH P-Channel 12 10000 f=1.0MHz -VGS , Gate to Source Voltage (V) I D = -5 A V DS = - 2 0 V 8 1000 C iss C (pF) 4 100 C oss C rss 0 0 4 8 12 16 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthjc) 0.2 10 -ID (A) 100us 0.1 0.1 0.05 1ms 1 PDM 0.02 t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C T c =25 C Single Pulse 0.1 0.1 1 10 o 10ms 100ms 1s DC 100 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 V DS =-5V 40 VG T j =25 o C T j =150 o C -ID , Drain Current (A) QG -4.5V QGS QGD 30 20 10 Charge 0 0 2 4 6 8 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252(4L) A B SYMBOLS Millimeters MIN NOM MAX A B C D P S 6.40 5.2 9.40 2.40 0.50 3.50 0.80 0.40 2.20 0.45 0.00 0.90 5.40 6.6 5.35 9.80 2.70 1.27 REF. 0.65 4.00 1.00 0.50 2.30 0.50 0.075 1.20 5.60 6.80 5.50 10.20 3.00 0.80 4.50 1.20 0.60 2.40 0.55 0.15 1.50 5.80 E3 C M E3 R G H J K L R D M S P G 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. H K J L Part Marking Information & Packing : TO-252(4L) Part Number Package Code meet Rohs requirement 4525GEH LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 8 |
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